All carbon materials pn diode

Ambipolar Effect Free Double Gate PN Diode Based Tunnel FET

4H-SiC pn Diode using Internal Ring(IR) Termination Technique

In this paper, the breakdown characteristic of 4H-SiC pn diode using Internal Ring(IR) termination technique is investigated. N-type 4H-SiC wafer having a 10um epilayer with a doping concentration of 5.4×10 15 /cm 3 was used to fabricate the pn diodes with one or two IRs. IR was formed by boron implantation of single energy of 360keV with 5×10 14 /cm 2 dose and activation annealing at 1700 o C ...

Application of All Ceramic Materials in Dentistry

The daily increase in Patientschr('39') demand for cosmetic treatments has led to dental restorations moving towards the use of all-ceramic materials. The development of all-ceramic restorations over the last decade has revolutionized aesthetic dentistry. Recent advances in ceramic manufacturing and processing methods have led to the evolutionary growth of all-ceramic materials with superior bi...

All-printed diode operating at 1.6 GHz.

Printed electronics are considered for wireless electronic tags and sensors within the future Internet-of-things (IoT) concept. As a consequence of the low charge carrier mobility of present printable organic and inorganic semiconductors, the operational frequency of printed rectifiers is not high enough to enable direct communication and powering between mobile phones and printed e-tags. Here,...

Demonstration of an amorphous carbon tunnel diode

Negative differential conductance in metal/amorphous nitrogenated carbon a-CNx /Si structures is demonstrated at room temperature. These metal-insulator-semiconductor tunnel diodes are fabricated by optimizing the tunnel barrier at the a-CNx /Si junction through the control of the band gap and nitrogen doping level in carbon where this a-C layer acts as a semi-insulator. A small electron tunnel...